Title:
ELECTRON BEAM DEVICE, ITS ELECTRON SOURCE IMAGE FORMATION DEVICE USING IT, AND ELECTRIFICATION PREVENTION BASE MATERIAL
Document Type and Number:
Japanese Patent JP3230729
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain stable high resistance, and prevent the generation of secondary electrons resulting from the radiation of an electron beam by forming a charge prevention film composed of a semi-conductive film formed by dispersing or island-like depositing carbon on the surface of a spacer used for an electron beam device.
SOLUTION: A semi-conduction film 5 which has a carbon-dispersed layer and the specific resistance of which is 0.1 to 1×108 Ω cm is formed on an insulative member 1 of an atmospheric pressure resistant spacer base body. Or, by an electrification prevention film 2 formed by the island-like deposition of carbon 3 on the semi- conduction film 5 which has the specific resistance of 0.1 to 1×108 Ω cm, the deterioration of image quality resulting from the path distortion caused by electrification at the collision time of emitting electrons to a spacer is avoided. When the carbon is dispersed in a several nm to 20 nm are from a substance surface, the secondary electrons collide with the carbon so as to suppress the emission of the secondary electrons. When the carbon is deposited island-like, the resistance of the spacer is regulated by the semi-conductive film so that the emission amount of the secondary electrons can be suppressed.
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Inventors:
Hiromitsu Takase
Hiroshi Takagi
Hiroshi Takagi
Application Number:
JP8851797A
Publication Date:
November 19, 2001
Filing Date:
April 07, 1997
Export Citation:
Assignee:
Canon Inc
International Classes:
H01J29/87; G09F9/30; H01J1/30; H01J1/316; H01J5/03; H01J31/12; H01L31/16; H04N5/68; (IPC1-7): H01J29/87; G09F9/30; H01J1/316; H01J31/12; H01L31/16; H04N5/68
Domestic Patent References:
| JP8180821A | ||||
| JP922649A | ||||
| JP4132136A | ||||
| JP8250032A |
Attorney, Agent or Firm:
Johei Yamashita