ELECTRON BEAM DEVICE WHICH MODIFIES PROPERTY OF SAMPLE AND METHOD FOR MANUFACTURING DEVICE BY USING SUCH ELECTRON BEAM DEVICE

Japanese Patent JP2005207880

A

To provide an electron beam device which can irradiate a sample with a low-energy electron beam in an electron beam device for irradiating a low-permittivity material with an electron beam to anneal or harden it and a method for manufacturing a device by using the electron beam device.

In the electron beam device where the sample 3 is irradiated with an electron beam emitted from an electron gun 11 to modify a material property 2 on the surface of the sample 3, the electron gun 11 is located in a position which cannot be seen directly from the sample 3 and the electron beam emitted from the electron gun 11 is deflected by a deflection means 13 and is incident on the surface of the sample 3. The electron gun 11 is located so as to form a prescribed angle between its optical axis and the normal 4 of the sample 3, and deflection means 16 and 17 deflect the electron beam so as to irradiate the surface of the sample 3 with the electron beam of a uniform irradiation dose.

JP2002141299	DEVICE AND METHOD FOR SENSING TURBO PUMP DRIVING STATE IN TENDETRON ACCELERATOR OF SEMICONDUCTOR ION INJECTING DEVICE
JP2001221897	DEVICE FOR MEASURING DISTRIBUTION OF ELECTRON BEAM
JPS59189599	PARTICLE ACCELERATOR

NAKASUJI MAMORU
NOMICHI SHINJI
SATAKE TORU
AIYOSHIZAWA SHIYUNICHI

JP2004014556A

August 04, 2005

January 22, 2004

Click for automatic bibliography generation  

EBARA CORP

G21K5/04; G21K1/02; G21K1/093; H01J37/30; H01L21/027; H01L21/31; H01L21/768; (IPC1-7): G21K5/04; G21K1/02; G21K1/093; H01J37/30; H01L21/027; H01L21/31; H01L21/768

Kazuo Shamoto
Hideo Tanaka
Otsuka Sumie
Fumitoshi Nishiyama

Previous Patent: COMBUSTIBLE GAS DETECTOR

Next Patent: CHIP FOR MICROCHEMICAL SYSTEM, PHOTOTHERMAL SPECTROSCOPY USING THE CHIP, AND MANUFACTURING METHOD OF...