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Patent Searching and Data


Title:
ELECTRON BEAM DEVICE
Document Type and Number:
Japanese Patent JPH05325812
Kind Code:
A
Abstract:

PURPOSE: To provide an electron beam device wherein uniform potential can be applied to a secondary electron while reducing a lens effect relating to a primary electron, in the electron beam device of electron beam tester or the like for performing voltage measurement of a sample, functional test and improper analysis of a large scale integrated circuit (hereinafter, called LSI) with high space resolution and with no apprehension of destruction.

CONSTITUTION: A device includes a detector 28 for detecting a secondary electron generated when a primary electron beam is applied to a sample 22 and secondary electron controlling electrodes 18a, 18b, 18c for guiding the secondary electron to this detector 28. The secondary electron controlling electrodes 18a, 18b, 18c are constituted such as in a hollow cylindrical shape for surrounding the secondary electron, in the electron beam device of measuring voltage of the sample 22 based on a detection result from the detector 28.


Inventors:
NAKAZAWA KAZUHIRO
ABE TAKAYUKI
ITO AKIO
Application Number:
JP12602692A
Publication Date:
December 10, 1993
Filing Date:
May 19, 1992
Export Citation:
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Assignee:
FUJITSU LTD
International Classes:
G01R31/302; H01J27/20; H01J37/28; G01R19/00; (IPC1-7): H01J27/20; G01R19/00; G01R31/302
Attorney, Agent or Firm:
Yasuo Ishikawa