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Title:
ELECTRON BEAM LITHOGRAPHY APPARATUS
Document Type and Number:
Japanese Patent JPS5459884
Kind Code:
A
Abstract:
PURPOSE:To obtain precision lithography by adding two reference marks in separate positions on a sample base, measuring the distance therebetween with a laser interference length measuring instrument and performing temperature compensation of electron beam radiation position. CONSTITUTION:Two reference marks 7X, 7Y are newly provided in addition to a reference mark 7 provided on a sample base 4, and a laser interference length measuring instrument and mirrors 13, 13X, 13Y for projecting laser light 16 to the reflecting faces 5X, 5Y of the mirror 5 mounted to the sample base 4 are disposed in proximity to the sample base 4. With such constitution, first the position of the mark 7 is detected with a reflecting electron detector 6 and is sent to a computer 10 via coding mechanism 9. At the same time, the distance between the reflecting face 5X and morror 13X, and between the reflecting face 5Y and mirror 13Y are measured and are applied to the computer 10. Next, the sample base 14 provided on the sample base 4 is moved to the mark 7X and the distance thereof is measured with the length measuring instrument 11. The amount of deviation of the sample base 14 accompanied with the temperature change is then computed with the computer 10 and is corrected with a deflector 3.

Inventors:
NAKAMURA KAZUMITSU
KATAGIRI SHINJIROU
Application Number:
JP12584377A
Publication Date:
May 14, 1979
Filing Date:
October 21, 1977
Export Citation:
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Assignee:
HITACHI LTD
International Classes:
H01J37/305; G03F7/20; H01J37/28; H01L21/027; H01L21/26; (IPC1-7): H01J37/28; H01L21/26



 
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