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Title:
ELECTRON BEAM LITHOGRAPHY SYSTEM
Document Type and Number:
Japanese Patent JPH05144715
Kind Code:
A
Abstract:

PURPOSE: To write a repeating pattern highly accurately by detecting rotation and dimensions of a beam having arbitrary profile and correcting thus detected rotation and dimensions.

CONSTITUTION: Microparticles 12 having high electron reflectance and secondary electron emission rate are scanned with a beam having arbitrary profile and the coordinates of the edge of beam are detected based on a reflected or secondary electron intensity signal and then dimensions, rotation and distortion of the beam are detected based on thus detected beam edge coordinates. After the rotation and the projection magnifying power are regulated within an error range, a shaping deflector 4 electrooptically moves a rectangular electron beam having a side normal to the connecting direction of a sample, formed by an aperture board 2 having a rectangular opening for pattern selection, above the opening of an aperture board 6 having an opening of arbitrary profile longer, by more than magnifying power setting error, than a dimension defined by the projection magnifying power on one side in the connecting direction, thus finely adjusting the dimensions of the beam having arbitrary profile on the sample.


Inventors:
OTA HIROYA
MATSUZAKA TAKASHI
SAITO NORIO
OKUMURA MASAHIDE
OKAZAKI SHINJI
KONO TOSHIHIKO
KAWASAKI KATSUHIRO
Application Number:
JP30592791A
Publication Date:
June 11, 1993
Filing Date:
November 21, 1991
Export Citation:
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Assignee:
HITACHI LTD
International Classes:
H01J37/305; H01L21/027; (IPC1-7): H01J37/305; H01L21/027
Attorney, Agent or Firm:
Ogawa Katsuo



 
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