Title:
ELECTRON BEAM LITHOGRAPHY
Document Type and Number:
Japanese Patent JPH01152727
Kind Code:
A
Abstract:
PURPOSE:To prevent the accuracy of a pattern from deteriorating due to the deformation of a mask and also to cope with the case that the size of the mask is increased or the accuracy of the pattern is improved by correcting a mask substrate formed in advance with a conductive film on its rear face by an electrostatic chuck plate, and by conducting drawing on the substrate in the corrected state. CONSTITUTION:Metal is thinly deposited on the rear face of a mask substrate 21, thereby allowing an electrostatic chuck 37 to operate, and the thickness of the metal is sufficiently reduced so that the transmissibility of a light when it is used as a mask does not decrease by 10% or more. In order to minimize a variation in a lithography position in the direction of an optical axis due to the irregular thickness of the substrate 21, the upper face of the mask is pressed on a reference face 38. The lithography is conducted in a state that the substrate 21 is corrected by the chuck 37. Thus, the pattern formed by the lithography on the flattened substrate is not deteriorated in the accuracy of the pattern due to the deflection, warpage of the mask, and a high accuracy is expected.
Inventors:
NAKASUJI MAMORU
Application Number:
JP31099887A
Publication Date:
June 15, 1989
Filing Date:
December 10, 1987
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
G03F7/20; H01L21/027; H01L21/30; (IPC1-7): G03F7/20; H01L21/30
Attorney, Agent or Firm:
Noriyuki Noriyuki (1 person outside)