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Title:
マスクを修復するための電子ビーム処理
Document Type and Number:
Japanese Patent JP4550801
Kind Code:
B2
Abstract:
Transmissivity is restored to a gallium stained substrate by directing an electron beam to the substrate in the presence of an etching gas. For higher concentrations of implanted gallium, the transparency can be substantially restored without reducing the thickness of the substrate. For lower doses of implanted gallium, the transmission is restored to 100%, although the thickness of the substrate is reduced. The invention is suitable for use in the repair of photolithography masks.

Inventors:
Diane Kay Stuart
David Jay Casey Jr.
John Beatty
Christian Earl Musil
Stephen Burger
Shibren Jay Shivarandy
Application Number:
JP2006501020A
Publication Date:
September 22, 2010
Filing Date:
January 16, 2004
Export Citation:
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Assignee:
F-I-I Company
International Classes:
B01J19/08; C03C15/00; C23F1/00; C23F1/02; C23F3/00; G03F1/00; G03F9/00; G21K5/10; H01L21/027; G03F
Domestic Patent References:
JP6347997A
JP2001521678A
JP10161293A
JP2004177682A
JP2003527629A
JP2006163053A
Foreign References:
WO2003012551A1
Attorney, Agent or Firm:
Masahiko Amagai