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Title:
ELECTRON DISCHARGE LITHOGRAPHY DEVICE BY USING ELECTRON DISCHARGE SOURCE OF SELECTIVELY GROWN CARBON NANOTUBE, OPERATION METHOD THEREFOR AND METHOD FOR MANUFACTURING LITHOGRAPHY ELECTRON DISCHARGE EMITTER
Document Type and Number:
Japanese Patent JP2003017405
Kind Code:
A
Abstract:

To provide an electron discharge lithography device by using a selectively grown carbon nanotube electron discharge source, and to provide the lithography method.

An electron discharge lithography device includes an electron discharge source arranged in a chamber and a stage, where a sample 14 is placed by leaving a prescribed distance from the electron discharge source. The electron discharge source is constituted of the carbon nanotubes 11, having electron discharge functions and a carbon nanotube 11 is used as the electron discharge source of a lithography process. Thus, the lithography process for realizing marked fine line width with very high precision is given. Since electrons, discharged from the carbon nanotube 11 expose electron beam resists 15 and 15' in parts where they correspond by 1:1, deviation of an exposed state, which occurs between the center and the end part of the substrate 12, is suppressed to be low. Such a lithography is realized with high productivity.


Inventors:
CHOI WON-BONG
YOO IN-KYEONG
Application Number:
JP2002162592A
Publication Date:
January 17, 2003
Filing Date:
June 04, 2002
Export Citation:
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Assignee:
SAMSUNG ELECTRONICS CO LTD
International Classes:
C01B31/02; G03F7/20; H01J3/02; H01J9/02; H01J37/305; H01L21/027; (IPC1-7): H01L21/027; G03F7/20; H01J9/02; H01J37/305
Attorney, Agent or Firm:
Dozo Isono