Title:
電子放出表示装置
Document Type and Number:
Japanese Patent JP4194543
Kind Code:
B2
Abstract:
An electron emission device includes cathode electrodes and gate electrodes formed on a first substrate and crossing each other while interposing an insulation layer. Opening portions are formed at the gate electrodes and the insulation layer while exposing the cathode electrodes. Electron emission sources are formed on the cathode electrodes exposed through the opening portions each with an area smaller than the area of the opening portion. An anode electrode is formed on a second substrate. Phosphor layers are formed on the anode electrode with a length extending in a first direction and a width extending in a second direction. Each electron emission source satisfies the following condition: a
Inventors:
Lee Sotatsu
Application Number:
JP2004275349A
Publication Date:
December 10, 2008
Filing Date:
September 22, 2004
Export Citation:
Assignee:
SAMSUNG SDI Co., LTD.
International Classes:
H01J29/04; H01J31/12; H01J1/00; H01J1/30; H01J1/304; H01J1/62; H01J3/02; H01J29/06; H01J63/04
Domestic Patent References:
JP2003203554A | ||||
JP2000243218A | ||||
JP2003151456A | ||||
JP11345561A | ||||
JP2003016919A | ||||
JP2003016912A | ||||
JP2002324501A | ||||
JP2000285794A |
Attorney, Agent or Firm:
Miaki Kametani
Tetsuo Kanamoto
Tetsuo Kanamoto