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Title:
電子放出素子およびその製造方法
Document Type and Number:
Japanese Patent JP6685341
Kind Code:
B2
Abstract:
A method of producing an electron emitting device includes: step A of providing an aluminum substrate or providing an aluminum layer supported by a substrate; step B of anodizing a surface of the aluminum substrate or a surface of the aluminum layer to form a porous alumina layer having a plurality of pores; step C of applying Ag nanoparticles in the plurality of pores to allow the Ag nanoparticles to be supported in the plurality of pores; step D of, after step C, applying a dielectric layer-forming solution onto substantially the entire surface of the aluminum substrate or the aluminum layer, the dielectric layer-forming solution containing, in an amount of not less than 7 mass % but less than 20 mass %, a polymerization product having siloxane bonds; step E of, after step D, at least reducing a solvent contained in the dielectric layer-forming solution to form the dielectric layer; and step F of forming an electrode on the dielectric layer.

Inventors:
Kenichiro Nakamatsu
Tokio Taguchi
Koji Shinkawa
Mai Takasaki
Tadashi Iwamatsu
Application Number:
JP2018069646A
Publication Date:
April 22, 2020
Filing Date:
March 30, 2018
Export Citation:
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Assignee:
Sharp Corporation
International Classes:
H01J9/02; H01J1/312
Domestic Patent References:
JP2019050140A
Foreign References:
WO2018016433A1
Attorney, Agent or Firm:
Seiji Okuda
Osamu Kita
Ryoji Yamashita
Akiko Miyake
Hidetaka Okabe
Yu Tanaka
Murase Nariyasu
Rinko Kita