ELECTRON TUBE

Japanese Patent JP3441101

B2

PURPOSE: To provide an electron tube containing semiconductor device, in which an electron introducing layer shows a good accumulation condition.
CONSTITUTION: A semiconductor device 10, in which an electron introducing layer 14 consisting of the second semiconductor material having a smaller work function than the first semiconductor material is formed on a base plate 11 consisting of the (p) type first semiconductor material, is contained in an electron tube. When two semiconductors, which have different work functions from each other, are brought into contact with each other, an electron moves from the second semiconductor material to the first semiconductor material and a hole moves in the opposite direction, so that the Fermi level is kept constant Therefore, the electron introducing layer 14 is brought into an accumulation condition, in which the surface part of the electron introducing layer 14 is provided with a lot of holes, and the electron, which is generated by the implanted electron around the surface of the electron introducing layer 14, reaches the connection part, between the base plate 11 and the electron introducing layer 14 without any recombination on the surface part and is detected as a signal.

Motohiro Suyama
Masaharu Muramatsu
Akinaga Yamamoto

JP2431393A

August 25, 2003

February 12, 1993

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Hamamatsu Photonics K.K.

H01J29/45; H01J31/50; H01J40/04; H01L21/339; H01L29/762; H01L31/10; H04N5/335; H04N5/341; H04N5/361; H04N5/369; H04N5/372; (IPC1-7): H01J29/45; H01J31/50; H01L21/339; H01L29/762; H01L31/10

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Yoshiki Hasegawa (3 outside)

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