PURPOSE: To realize an electron beam radiation type diode having a structor in a thin dead zone which incidental electrons may not intrude into a p-n junction surface, so as to provide an electron tube having improved sensitivity and precision.
CONSTITUTION: Photoelectrons generated by light inciden to a photoelectric surface 111 are accelerated to be incident on an electron beam radiation type diode 200. An inverse bias voltage is applied between an electrode 271 and an electrode 272 of the electron beam radiation type diode 200, and almost all the range of a low concentration impurity layer 220 is formed hollow. The incidental accelerated electrons emit motion energy at a high concentration layer 240 having an electron incidental surface and the hollow low concentration impurity layer 220 to generate electron-positive hole pairs. The high concentration layer 240 having the electron incidental surface is extremely thin, so almost no energy is emitted, but substantially all the energy is emitted in the hollow range. Signal load taken from the electron-positive hole pairs generated by this emission of energy is outputted as signals. from the electrodes 271, 272.
SUYAMA MOTOHIRO
YAMAMOTO AKINAGA
