Document Type and Number:
Japanese Patent JP4634209
Kind Code:
B2
Abstract:
To provide an electron detection device capable of restraining increase of dark current.
The electron detection device 1 has a photoelectric face plate 10 having a photoelectric face 11, an electron shielding member 60 limiting a path of the electron emitted from the photoelectric face 11, and an electron detector 40 outputting a signal according to incidence of the electron. The electron shielding member 60 has an opening 62 and the opening is located on a p+layer 45 of the electron detector 40. By the above, the electron emitted from the photoelectric face 11 of the photoelectric face plate 10 can be made incident on the p+layer 45 functioning as an electron incident face. Further, the electron shielding member 60 is located at a part very near to the electron detector 40, and periphery of the opening 62 is located at a part more inside than that of the p+layer 45. By the above, since an upper face of a pn-junction area 51, namely, an exposed face of the pn-junction is covered by the electron shielding member 60, incidence of electron and X-ray on the exposed face of the pn-junction area 51 can be prevented.
COPYRIGHT: (C)2007,JPO&INPIT
Inventors:
Ishikawa Yoshitaka
Suyama Motohiro
Akihiro Kageyama
Hirohito Fukasawa
Application Number:
JP2005117421A
Publication Date:
February 16, 2011
Filing Date:
April 14, 2005
Assignee:
Hamamatsu Photonics Co., Ltd.
International Classes:
H01J43/12; H01J40/04; H01L31/09; G01T1/24; G01T1/29
Domestic Patent References:
| JP6318447A | | | | |
| JP2004179539A | | | | |
| JP11068029A | | | | |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Shiro Terasaki
Satoru Ishida
