To provide the evaluation method of an electronic device for quantitatively evaluating the flatness of the upper surface of a base conductive film and the film thickness of a thin tunnel insulating film at once, at low costs, in a short time, with simplicity and with non-destructiveness.
A first test element 50 for evaluation is formed by arranging a tunnel insulating film 30 and an upper electrode 40 on a conductive substrate 10 in this order; a second test element 60 for evaluation in an MIM capacitor structure is formed by arranging a base conductive film 20, the tunnel insulating film 30, and the upper electrode 40 on the same conductive substrate 10 in this order; and the impedances of the test elements 50 and 60 for evaluation are respectively measured. The flatness of the upper surface of the base conductive film 20 is estimated based on the measurement result, and the film thickness of the tunnel insulating film is calculated in the test elements 50 and 60 for evaluation.
SAITO MAKOTO
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Sadao Muramatsu
Ryo Hashimoto
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