Title:
ELECTRONIC DEVICE USING FUNCTIONAL THIN FILM
Document Type and Number:
Japanese Patent JP2594859
Kind Code:
B2
Abstract:
PURPOSE: To facilitate epitaxial growth at the time of forming a functional material film, and prevent generation of cracks due to thermal stress, by forming an electrode in contact with a functional thin film of oxide system like PbTiO3 by using oxide superconductor or oxide semiconductor.
CONSTITUTION: An electrode in contact with a functional thin film of oxide system like PbTiO3 is formed by using oxide superconductor or oxide semiconductor. Said oxide superconductor is compound oxide containing lanthanoids or compound oxide containing bismuth or compound oxide containing thallium or compound oxide containing strontium. Thereby crystal structure is made identical to that of the functional thin film, and the lattice constants and the thermal expansion coefficient are approximated. Further characteristics such as high electric conduction, low thermal conduction, and large heat absorption ratio can be obtained.
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Inventors:
Hitoshi Tabata
Murata Osamu
Fujioka Junzo
Shunichi Minakata
Tomoji Kawai
Kawai Nanao
Murata Osamu
Fujioka Junzo
Shunichi Minakata
Tomoji Kawai
Kawai Nanao
Application Number:
JP36143991A
Publication Date:
March 26, 1997
Filing Date:
December 27, 1991
Export Citation:
Assignee:
Kawasaki Heavy Industries, Ltd.
International Classes:
G01J5/34; H01L37/02; H01L39/02; H01L39/22; H01L41/09; (IPC1-7): H01L37/02; H01L39/22; H01L41/09
Domestic Patent References:
| JP63224188A | ||||
| JP1198726A | ||||
| JP2130969A | ||||
| JP1143258A | ||||
| JP648682A | ||||
| JP5145123A |
Attorney, Agent or Firm:
Masahiro Nishimori