PURPOSE: To obtain a silicon carbide substrate free from disorders in its crystal structure by a method wherein a growth film is formed on the silicon carbide substrate whose surface is polished through a dry method with abrasive material at least selected from chrome oxide, cerium oxide, and iron oxide.

CONSTITUTION: A Schottky diode is formed through such a manner that a silicon carbide substrate 3 is polished, a silicon carbide epitaxial film 2 is formed on the substrate 3, a nickel electrode 4 is formed on the other surface of the silicon carbide substrate 3, and a gold electrode 1 serving as a Schottky electrode is formed on the silicon carbide epitaxial film 2. At this point, the silicon carbide substrate 3 is polished through a dry method with chrome oxide, cerium oxide, and iron oxide. By this setup, an excellent polished surface can be obtained, and the surface of a silicon carbide substrate can be set, free from mechanical defects or crystal distortions due to generated frictional heat and the catalystic action of these oxides.