Title:
電子素子及びその製造方法
Document Type and Number:
Japanese Patent JP4251268
Kind Code:
B2
Abstract:
A microelectronic device and a method for producing the device can overcome the disadvantages of known electronic devices composed of carbon molecules, and can deliver performance superior to the known devices. An insulated-gate field-effect transistor includes a multi-walled carbon nanotube (10) having an outer semiconductive carbon nanotube layer (1) and an inner metallic carbon nanotube layer (2) that is partially covered by the outer semiconductive carbon nanotube layer (1). A metal source electrode (3) and a metal drain electrode (5) are brought into contact with both ends of the semiconductive carbon nanotube layer (1) while a metal gate electrode (4) is brought into contact with the metallic carbon nanotube layer (2). The space between the semiconductive carbon nanotube layer (1) and the metallic carbon nanotube layer (2) is used as a gate insulating layer. Two layers including the outer semiconductive carbon nanotube layer (1) and the inner metallic carbon nanotube layer (2) are selected from carbon nanotube layers of a multi-walled carbon nanotube. These layers are processed into a form suitable for use as the multi-walled carbon nanotube (10).
Inventors:
Ryuichiro Maruyama
Makoto Ata
Seiji Shiraishi
Makoto Ata
Seiji Shiraishi
Application Number:
JP2002335879A
Publication Date:
April 08, 2009
Filing Date:
November 20, 2002
Export Citation:
Assignee:
ソニー株式会社
International Classes:
H01J9/02; H01L29/786; B82B1/00; B82B3/00; H01J1/304; H01L29/06; H01L51/30
Domestic Patent References:
| JP2002076324A | ||||
| JP2003086796A |
Foreign References:
| WO2002054505A1 |
Attorney, Agent or Firm:
Hiroshi Osaka