ELECTRONIC ELEMENT USING NANOSTRUCTURE GROUP AND METHOD OF MANUFACTURING SAME

Japanese Patent JP2006339110

A

To provide an electronic element in which nanostructures are formed along a desired direction other than a direction vertical to a main surface of a substrate at a desired position, and to provide a method of manufacturing the same.

The electronic element is provided with an Fe catalyst layer 4 formed above an Si substrate 10, and a CNT (carbon nano-tube) group connected to an exposed face 4a of the Fe catalyst layer 4. The exposed face 4a is a side face of the Fe catalyst layer 4. In this structure, the CNT 6 group can be grown in a desired direction at a desired position by changing a forming position of the Fe catalyst layer 4 and an angle between the main surface of the Si substrate 10 and the side face of the Fe catalyst layer 4.

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TOMOHISA SHINGO
TARUYA MASAYOSHI
KOBAYASHI HIROSHI

JP2005165686A

December 14, 2006

June 06, 2005

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MITSUBISHI ELECTRIC CORP

H01J1/304; B82B1/00; B82B3/00; C01B31/02; H01J9/02; H01L29/06; H01L29/66

JP2003282924A	2003-10-03
JP2004050395A	2004-02-19
JP2002150924A	2002-05-24
JP2005126323A	2005-05-19
JP2002118248A	2002-04-19
JP2004071527A	2004-03-04

Kuro Fukami
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai

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