To enable a semiconductor device to be enhanced in temperature cycle resistance and reflow resistance after it is subjected to a moisture absorption treatment by a method wherein an adhesive layer is formed on both the surfaces of a core formed of inorganic woven or nonwoven fabric.

An adhesive layer 1 is formed on both the surfaces of a core 2 formed of inorganic woven or nonwoven fabric for the formation of an electronic part adhesive member. A semiconductor chip 5 is bonded by thermocompression under a certain condition to the one surface of the electronic part adhesive member opposite to its other surface where a wiring board is provided, the adhesive layer 1 of the electronic part adhesive member is heated for a prescribed time to be cured, and then the pads of the semiconductor chip 5 and a wiring on the wiring board are connected together with a bonding wire 6. The inner lead 6' of the wiring board is bonded to the pad of the semiconductor chip 5, the semiconductor chip 5 and the bonding wires 6 are sealed up with sealing material 7, and solder balls as outer connection terminals 8 are provided for the formation of a semiconductor device.