Title:
ELECTROOPTIC SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JPS60156037
Kind Code:
A
Abstract:
The properties of integrated optics components can be decisively influenced by the choice of the chemical composition of the material, by doping and by structuring. Externally applied electrical fields also vary, e.g., the optical properties of the material. If the photon energy of a guided light wave is higher than the band gap, the Franz-Keldysh effect (electron absorption) masks other phenomena. A strong quadratic electro-optic (Kerr) effect and a linear (Pockels) effect have already been established in the region of transition to the transparent zone. The invention relates to the exploitation of the Pockels and Kerr effects for the purpose of variations to be carried out independently of amplitude. In order to be able to exploit a perceptible influence of the Kerr effect, it is necessary for the direction of propagation of the light wave guided in the material to be selected correctly with regard to the orientation of the material. It is essential, furthermore, that the band gap of the material is kept so large with respect to the photon energy that there is still no perceptible electro-absorption. This difference is preferably between 0.25 eV and 0.35 eV for an InGaAsP material.
Inventors:
HANSU PEETAA NORUTEINGU
YURUGEN KURAUZAA
PEETAA ARUBUREHITO
KARUSUTEN BORUNHORUTO
ROORANTO KAUMANSU
MIHIYAERU SHIYURAKU
YURUGEN KURAUZAA
PEETAA ARUBUREHITO
KARUSUTEN BORUNHORUTO
ROORANTO KAUMANSU
MIHIYAERU SHIYURAKU
Application Number:
JP21277184A
Publication Date:
August 16, 1985
Filing Date:
October 12, 1984
Export Citation:
Assignee:
HERTZ INST HEINRICH
International Classes:
G02F1/015; G02F1/025; (IPC1-7): G02F1/015
Attorney, Agent or Firm:
Toshio Yano