To provide an electrophotographic photoreceptor which has high response to light and a high resolution without image defects and which can sufficiently cope with a fast processing rate and the high image quality of an electrophotographic application apparatus.
In this photoreceptor to be mounted on an electrophotographic application apparatus of a ≥100 ppm processing rate and ≥300 dpi resolution, a photosensitive layer formed on a conductive base body is composed of an As2Se3 alloy containing 36 to 40 wt.%. As by adding 1,000 to 20,000 ppm iodine and the film thickness of the photosensitive layer is 30 to 50 μm. This photoreceptor has improved response to light and resolution and can sufficiently cope with the fast processing rate and the high image quality of the electrophotographic application apparatus without causing image defects.
FUJII MAKOTO
ADACHI KAZUYA
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