PURPOSE: To obtain an electrophotographic sensitive body superior in potential acceptance, low in residual potential, high in sensitivity to the wide wavelength region up to the near infrared region, good in adhesion to a substrate, and superior in resistance to circumstances by forming the first barrier layer made of boron nitride and the second barrier layer made of a p-type or n-type microcrystalline silicon (μc-Si).

CONSTITUTION: The first barrier layer 22 made of boron nitride is formed on the conductive substrate 21 made of aluminum or the like, and on this layer the second barrier layer 23 made of μc-Si is formed. On this layer 23, a photoconductive layer 24 made of a-Si containing H in an amount of 1W5atom% is formed. The layer 22 restrains the flow of carriers between the conductive substrate 21 and the photoconductive layer 24, and enhances the carrier retention function, and the potential acceptance of the electrophotographic sensitive body. The layer 23 has rectification function permits rapid flow of carriers from the photoconductive layer 24 to the conductive substrate 21, but restrains the reverse flow of the carriers to enhance carrier retention function on the surface of the photoconductive member as well as the potential acceptance of the photoconductive member.