To reliably fill a plated metal, such as copper, into an inside of via holes without producing defects, such as voids, in the plated metal, even when the via holes are covered with an auxiliary metal layer made of Ru or the like having a dielectric constant lower than that of a copper seed layer, or even when an auxiliary metal layer made of Ru or the like is partly exposed in the via holes.
Pretreatment is performed by immersing a substrate having via holes formed in a surface thereof in a pretreatment solution, the pretreatment solution in the via holes is replaced with a plating solution by immersing the substrate in the plating solution without applying a voltage between the substrate and an anode, first-stage electroplating is performed while the voltage applied between the substrate and the anode is controlled to be equal to or higher than a voltage that is necessary for an electric current, which is appropriate to fill a plated metal into the via holes, to flow stably between the substrate and the anode, and second-stage electroplating is performed while the electric current flowing between the substrate and the anode is controlled at an electric current appropriate to fill the plated metal into the via holes.
TAMARI YUSUKE
YASUDA SHINGO
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Ryoji Kosugi
Tetsuya Hirosawa
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