PURPOSE: To enable the device to be easily composed by a method wherein a contact and an element to be chucked are made conductive by breaking down an insulating film by a contact making use of that the capacitance between the element and the contact is smaller than the one between the element and an electrode for static chuck.
CONSTITUTION: A contact 4 is pushed against an element 1 to be chucked having an insulating film so as to connect a DC power supply 6 for the electrostatic chucking to the contact 4. Next, the contact 4 and the element 1 to be chucked are made conductive by directly breaking the insulating film making use of the smaller capacitance between the element 1 and the contact 4 than the one between said element 1 and an electrode 2 for electrostatic chucking. Through these procedures, a specific discharging electrode, etc., can be eliminated to make the contact 4 and the element 1 to be chucked conductive by breaking down the insulating film formed on the surface of the element 1 thereby enabling the device constitution to be simplified.
WO/2000/075970 | SUBSTRATE SUPPORT FOR PLASMA PROCESSING |
JP6427131 | Polishing equipment and polishing method |
JP2010157776 | ELECTROSTATIC CHUCK |
JPS58137536A | 1983-08-16 |