Title:
ELECTROSTATIC INDUCTION TYPE TRANSISTOR LOGIC
Document Type and Number:
Japanese Patent JPS53122385
Kind Code:
A
Abstract:
PURPOSE: To reduce the amplitude of operation by the amplitude corresponding to the forward voltage drop, to decreased the power-delay time product, and also to omit the resistance domain for electrode formation, by inserting a Schottky diode to the part corresponding to the electrode of the rain domain present between the gate domains.
Inventors:
HIRAO TADASHI
KIJIMA KOUICHI
NAKANO TAKAO
KIJIMA KOUICHI
NAKANO TAKAO
Application Number:
JP3740777A
Publication Date:
October 25, 1978
Filing Date:
March 31, 1977
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L29/80; H01L21/8222; H01L27/02; H01L27/06; H03K19/094; (IPC1-7): H01L27/04; H01L29/80; H03K19/08
Previous Patent: JPS53122384
Next Patent: TRANSISTOR LOGIC SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE OF ELECTROSTATIC INDUCTION TYPE
Next Patent: TRANSISTOR LOGIC SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE OF ELECTROSTATIC INDUCTION TYPE