PURPOSE: To grasp the distribution of minute quantity of impurities in Si in the contact part with good reliability by setting the spectral intensity ratio so as to correspond to either of three regions, and performing analysis.
CONSTITUTION: Ti and W are entered by an input device 3, and the energy position of each element is checked on the basis of the characteristic X-ray peak profile for element accommodated in a memory 6. A computational processing device 4 determines the noise intensity N in the same energy range as the integral intensity in the specified energy region, and the ratio S/N is obtained. If this ratio exceeds 1.8, the As concentration is calculated using a program for concentration conversion accommodated in the memory 6-if below 1.8, judgement is passed that As exists qualitatively. When the ratio S/N is smaller than 1.4, it is judged that As is below the sensibility limit. Similar processing is made for Al, Si, Ti, W, and the results are displayed by a display device 5.
AOYAMA TAKASHI
SUZUKI MASAYASU
