To provide an ellipsometer device for effectively measuring a film thickness and a refractive index of an anti-reflection film formed on a surface of a mono-crystalline silicon solar cell.
An ellipsometer device 10 comprises: a light source 5 for irradiating with a laser beam a surface, on which an anti-reflective film is formed, of a measurement sample 1 on which an anti-reflective film is formed; a detector 6 for measuring a thickness and a refractive index of the anti-reflective film by, based on a reflected light reflected from the measurement sample, measuring polarization variation of the reflected light; a stage 2 having a rotation angle adjusting section for holding the measurement sample on a sample mounting surface and rotating the measurement sample about an axis perpendicular to the sample mounting surface and an inclination adjusting section for inclining the measurement sample; and a support portion 7 for holding the stage on a stage mounting surface.
| JP2011106920A | 2011-06-02 | |||
| JPH05273120A | 1993-10-22 | |||
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| JPH05158084A | 1993-06-25 | |||
| JP2011009661A | 2011-01-13 | |||
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