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Title:
EMBEDDING MATERIAL FOR SEMICONDUCTOR, EMBEDDING MATERIAL COMPOSITION FOR SEMICONDUCTOR, EMBEDDING FILM AND MANUFACTURING METHOD THEREFOR, AND MATERIAL WITH EMBEDDING FILM
Document Type and Number:
Japanese Patent JP2018203881
Kind Code:
A
Abstract:
To provide an embedding material for semiconductor excellent in heat resistance and filling property to a recess, and capable of forming an embedding film in which generation of void is suppressed.SOLUTION: An embedding material for semiconductor contains a polymer containing a structural unit represented by the general formula (1). M represents Si, Ge, Sn or Pb. Rand Rrepresent a hydrogen atom, a hydroxyl group, an alkyl group having 1 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms, a monovalent aromatic group having 6 to 20 carbon atoms, or a silyl group or a substituted silyl group. Rrepresents an alkylene group having 1 to 20 carbon atoms, an alkenylene group having 2 to 20 carbon atoms, an alkynylene group having 2 to 20 carbon atoms, a bivalent aromatic group having 6 to 20 carbon atoms or a silylene group represented by the general formula (5). x and y represent 0 or 1. Rand Rrepresent a hydrogen atom, a hydroxyl group, an alkyl group having 1 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms, or a monovalent aromatic group having 6 to 20 carbon atoms.SELECTED DRAWING: None

Inventors:
井上 浩二
田中 博文
和知 浩子
小野 昇子
Application Number:
JP2017110963A
Publication Date:
December 27, 2018
Filing Date:
June 05, 2017
Export Citation:
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Assignee:
三井化学株式会社
International Classes:
C08G77/60; C08G79/00
Attorney, Agent or Firm:
中島 淳
加藤 和詳
福田 浩志