To provide a processed article improved in the aspect that a crystalline metal oxide formed by micro-arc oxidation of metallic aluminum or its alloys, or titanium or its alloys is unsuitable for electronic components since its dielectric breakdown voltage is low for a material of the electronic components because of its low thickness.
Focusing on the fact that a crystalline metal oxide 2 formed by micro-arc oxidation is a material having a complex pattern or an uneven shape and that it can be formed on anywhere as desired, an insulator layer 3 having high adhesion strength is provided by forming a coating of glass or resin onto the complex pattern or the uneven shape to increase the dielectric breakdown voltage that is considered to be insufficient because of low thickness of the crystalline metal oxide 2.
WARABI NAOFUMI
JPH0272515A | 1990-03-12 | |||
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JPH10212107A | 1998-08-11 | |||
JPS5216517A | 1977-02-07 | |||
JP2009102721A | 2009-05-14 | |||
JP2006116398A | 2006-05-11 | |||
JPS3516444B1 | ||||
JP2007517983A | 2007-07-05 |
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