Title:
ENCAPSULANT FOR SEMICONDUCTOR
Document Type and Number:
Japanese Patent JP11021432
Kind Code:
A
Abstract:
To obtain an encapsulant for semiconductors, having excellent flame retardance without using a brominated epoxy resin and antimony trioxide and excellent in moisture and heat resistances, mechanical strength, dimensional stability, heat radiating and insulating properties, adhesion, noncorrosiveness for aluminum, fluidity, storage stability, etc.
This encapsulant for semiconductors consists essentially of 5-30 wt.% epoxy resin, 4-15 wt.% curing agent and 50-90 wt.% filler and contains 1-5 wt.% particulate additive prepared by supporting a metallic molybdate (preferably zinc molybdate) on fine particles of ceramics. The ceramic fine particles of the particulate additive are silica fine particles formed by a sol-gel method.
Inventors:
Kasahara, Masuo
Application Number:
JP1997000189202
Publication Date:
January 26, 1999
Filing Date:
June 30, 1997
Export Citation:
Assignee:
NIPPON SHIYAAUIN UIRIAMUZU KK
International Classes:
C08K7/26; C08K9/02; C08L63/00; H01L23/29; H01L23/31; C08K7/00; C08K9/00; C08L63/00; H01L23/28; (IPC1-7): C08L63/00; C08K7/26; C08K9/02; H01L23/29; H01L23/31