Title:
END FACE EMITTING DIODE
Document Type and Number:
Japanese Patent JPH04162782
Kind Code:
A
Abstract:
PURPOSE:To sufficiently absorb the light, which has oozed out rearward from an active layer, and to monitor light output by forming a reflecting face inclined rearward, and forming a layer structure, which functions as a light receiving element, at the upper layer or the lower layer, and causing the rear emission light to enter the light receiving element by the reflecting face. CONSTITUTION:A reflecting face inclined rearward is made, and also a layer structure, which functions as a light receiving element, is made at the upper layer and a lower layer. And by the voltage applied between an n1-electrode 11 and an n2-electrode 23, the section below the n2-electrode 23 becomes an exciting region, and the active layer 19 of InGaAsP is excited and emits light. The light, which has oozed out rearward from the exciting region, is reflected downward at the rear reflecting face 25 through a nonexciting absorbing region, and is absorbed in the light absorbing layer 14 of n<->-InGaAs. The electrons and positive holes in pairs generated by the absorption of light are taken out as a current by the reverse bias voltage applied between the n1-electrode 11 and the p-electrode 24. Hereby, the current from the light receiving part is utilized for monitoring of the light intensity in the light emitting part.
Inventors:
OMAE YOSHINOBU
Application Number:
JP29030890A
Publication Date:
June 08, 1992
Filing Date:
October 26, 1990
Export Citation:
Assignee:
SHIMADZU CORP
International Classes:
H01L31/12; H01L33/10; H01L33/14; H01L33/24; H01L33/30; (IPC1-7): H01L31/12; H01L33/00
Attorney, Agent or Firm:
Yasuo Ishii