Title:
低分極化効果のGaNベースド発光ダイオード用エピタキシャル材料及び製造方法
Document Type and Number:
Japanese Patent JP5059108
Kind Code:
B2
Abstract:
A method of manufacturing epitaxial material used for GaN based LED with low polarization effect, which includes steps of growing n-type InGaAlN layer composed of GaN buffer layer (2) and n-type GaN layer (3), low polarizing active layer composed of InGaAlN multi-quantum well structure polarized regulating and controlling layer (4) and InGaAlN multi-quantum well structure light emitting layer (5) and p-type InGaAlN layer (6) on sapphire or SiC substrate (1) in turn. The method adds InGaAlN multi-quantum well structure polarized regulating and controlling layer, thus reduces polarization effect of quantum well active region.
Inventors:
Chen Phong
Char Hai Kyan
Guo Lee Way
One wen shin
Zhou Chun Min
Char Hai Kyan
Guo Lee Way
One wen shin
Zhou Chun Min
Application Number:
JP2009524067A
Publication Date:
October 24, 2012
Filing Date:
August 15, 2007
Export Citation:
Assignee:
INSTITUTE OF PHYSICS CHINESE ACADEMY OF SCIENCES
International Classes:
H01L33/32; H01L33/00; H01L33/04; H01L33/06; H01L33/16
Domestic Patent References:
| JP2007019277A | ||||
| JP2007123878A | ||||
| JP2006128607A |
Other References:
八百隆文、藤井克司、神門賢二,発光ダイオード,日本,朝倉書店,2010年 1月25日,186-189頁
Attorney, Agent or Firm:
Masaki Hirota