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Title:
EPITAXIAL THIN FILM
Document Type and Number:
Japanese Patent JP2011044705
Kind Code:
A
Abstract:

To rapidly, inexpensively and easily grow an epitaxial thin film on a textured substrate.

By using a combustion chemical vapor deposition method (CCVD) or the like, a perovskite type dielectric layer is formed on a textured substrate. A precursor substance supplied to a supply end 102 of a CCVD device 100 reacts with oxygen supplied from another supply port 106 to deposit a product on the substrate S. As a dielectric material in a capacitor, a MgO single-crystal substrate is used, SrTiO3 is formed using an organic metal compound as a precursor substance, and a BaSrTiO3 formation technique or the like is provided.


Inventors:
HUNT ANDREW T
DESHPANDE GIRISH
COUSINS DONALD
HWANG TZYY-JIUAN JAN
LIN WEN-YI
SHOUP SHARA S
Application Number:
JP2010166139A
Publication Date:
March 03, 2011
Filing Date:
July 23, 2010
Export Citation:
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Assignee:
NGIMAT CO
International Classes:
C30B29/22; H01G4/33; B01D71/02; C23C16/40; C23C16/453; H01B1/00; H01G4/06; H01G4/12; H01G7/06; H01L21/20; H01L39/24; H01L49/02; H01M8/02; H01M4/88; H01M8/12; H01B
Domestic Patent References:
JPH09221393A1997-08-26
JPH04225594A1992-08-14
JPH05299584A1993-11-12
JPH09321361A1997-12-12
Foreign References:
WO1996032201A11996-10-17
Attorney, Agent or Firm:
Hidekazu Miyoshi
Masakazu Ito
Yuko Hara