Title:
EPITAXIAL WAFER AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JPH06260415
Kind Code:
A
Abstract:
PURPOSE: To solve problems of diffusion in solid phase of impurities from a wafer to an epitaxial layer and auto-doping of the impurities via vapor phase and to form a steep impurity profile in the interface between the wafer and the epitaxial layer.
CONSTITUTION: The uneven surface of a wafer by cleaning is roughly flattened in a first epitaxial growth process of a temperature T1 and in a second epitaxial growth process subsequent to the first epitaxial growth process, an epitaxial temperature T2 is set on the condition of T2<T1. Thereby, an impurity profile in the interface between the wafer and an epitaxial layer is formed steep.
Inventors:
TANAKA HIDEYUKI
YOKOYAMA TAKASHI
SUMITA KUNYU
YOKOYAMA TAKASHI
SUMITA KUNYU
Application Number:
JP4472993A
Publication Date:
September 16, 1994
Filing Date:
March 05, 1993
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L21/20; H01L21/205; (IPC1-7): H01L21/20; H01L21/205
Attorney, Agent or Firm:
Akira Kobiji (2 outside)
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