To avoid epitaxial-layer drop problem.

A lift pin 10 is used to push up a wafer from a susceptor 6. The pin 10 is made of a material, which has a thermal conductivity of less than 128 W/m.K which is lower than that of the susceptor 6, and a head part 10b of the lift pin 10 is formed in a shape such that the head part 10b is snugly fitted into a through-hole 8 without any gap therebetween. During formation of an epitaxial layer, heat transmission toward the lower surface side of the susceptor 6 from an upper surface of the wafer W can be suppressed by the head part 10b and a led part 10a of the pin 10. The problem that the temperature of a zone P in the upper surface of the wafer W corresponding to the through-hole 8 being lower than that of the other zone, can be avoided, and thus an epitaxial-layer drop that an epitaxial layer formed in the zone P is thinner than the other zone, can be prevented.