Title:
エピタキシャルウェーハの製造方法
Document Type and Number:
Japanese Patent JP7231120
Kind Code:
B2
Abstract:
The present invention is a method for producing an epitaxial wafer forming a single crystal silicon layer on a single crystal silicon wafer, comprising, a step of removing native oxide film on surface of the single crystal silicon wafer with hydrofluoric acid, a step of forming an oxygen atomic layer on the surface of the single crystal silicon wafer from which the native oxide film has been removed, a step of epitaxially growing the single crystal silicon layer on the surface of the single crystal silicon wafer on which the oxygen atomic layer is formed, wherein the plane concentration of oxygen in the oxygen atomic layer is 1×1015 atoms/cm2 or less. As a result, a method for producing an epitaxial wafer, that an oxygen atomic layer can be stably and simply introduced into an epitaxial layer, and having a good-quality single crystal silicon epitaxial layer is provided.
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Inventors:
Suzuki Katsuka
Application Number:
JP2022552294A
Publication Date:
March 01, 2023
Filing Date:
December 06, 2021
Export Citation:
Assignee:
Shin-Etsu Semiconductor Co., Ltd.
International Classes:
H01L21/205; C30B25/20; C30B29/06
Domestic Patent References:
| JP2000323689A | ||||
| JP2019004050A | ||||
| JP2014165494A | ||||
| JP2003197549A |
Attorney, Agent or Firm:
Mikio Yoshimiya
Toshihiro Kobayashi
Toru Otsuka
Toshihiro Kobayashi
Toru Otsuka