Title:
EPITAXIAL WAFER
Document Type and Number:
Japanese Patent JP3747125
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide an epitaxial wafer in which nearly perfect alignment can be realized between a buffer layer and a group III nitride semiconductor layer of a cubic system structure to be laminated on the buffer layer.
SOLUTION: An epitaxial wafer 10 is a laminate which includes a crystalline substrate 1 of a cubic system structure, a buffer layer 2 formed on the substrate 1, the material of the buffer layer being expressed by a formula BpGaqAs (0<p≤1, p+q=1), and a nitride semiconductor layer 3 of a mainly cubic system structure formed on the buffer layer 2, the material of the layer 3 being expressed by a formula AlxGayInzNWM1-w (0≤x, y, z≤1, x+y+z=1, 0<w≤1, where symbol M indicates a group V element other than nitrogen).
Inventors:
Kazutaka Terashima
Takuji Tsuzaki
Takashi Udagawa
Takuji Tsuzaki
Takashi Udagawa
Application Number:
JP5796298A
Publication Date:
February 22, 2006
Filing Date:
March 10, 1998
Export Citation:
Assignee:
SHOWA DENKO K.K.
International Classes:
H01L21/20; H01L21/02; H01L21/338; H01L29/20; H01L29/812; H01L33/12; H01L33/16; H01L33/32; H01S5/00; H01S5/323; (IPC1-7): H01L21/20; H01L21/02; H01L33/00; H01S3/18
Domestic Patent References:
| JP2288388A | ||||
| JP2288371A | ||||
| JP2275682A |
Attorney, Agent or Firm:
Takemichi Fukuda
Kenzo Fukuda
Shinichi Fukuda
Kenzo Fukuda
Shinichi Fukuda