Title:
エピタキシャル成長用サセプタおよびエピタキシャル成長方法
Document Type and Number:
Japanese Patent JP4285240
Kind Code:
B2
Abstract:
A susceptor (10) for use in an epitaxial growth apparatus and method where a plurality of circular through-holes (10b, 10c) are formed in the bottom wall of a pocket (10a) in an outer peripheral region a distance of up to about 1/2 the radius toward the center of Lhe circular bottom wall. The total opening surface area of these through-holes (10a, 10c) is 0.05 to 55% of the surface area of the bottom wall. The opening surface area of each of the through-holes (10b, 10c) provided at this outer peripheral region is 0.2 to 3.2 mm 2 and the density of the through-holes (10b, 10c) is 0.25 to 25 per cm 2 , After a semiconductor wafer is mounted in the pocket (10a), epitaxial growth is carried out while source gas and carrier gas (i.e., reactive gas) is made to flow on the upper surface side of the susceptor (10) and carrier gas is made to flow on the lower surface side.
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Inventors:
Masayuki Ishibashi
John F. Kruger
Noriyuki Doi
Horie Daizo
Takashi Fujikawa
John F. Kruger
Noriyuki Doi
Horie Daizo
Takashi Fujikawa
Application Number:
JP2003560968A
Publication Date:
June 24, 2009
Filing Date:
December 23, 2002
Export Citation:
Assignee:
Sumco inc.
International Classes:
H01L21/20; H01L21/205; C23C16/455; C23C16/458; C30B25/12; C30B29/06; H01L21/687; C23C16/44
Domestic Patent References:
| JP2000323556A | ||||
| JP63058819A | ||||
| JP2003229370A |
Attorney, Agent or Firm:
Ichiro Abe