To provide equipment and a method for heat treating a substrate in which such a situation as an inner wall face member is not heated uniformly but heated unevenly is prevented suitably.

Heating gas passing through a treatment chamber is heated by heating piping and at least a part of the heating pipe is arranged close enough for the internal heating gas to exert a thermal effect on the inner wall face member. In such a structure, the heating piping has heated piping for heating the heating gas at a temperature substantially equal to or higher than that of the inner wall face member, and non-heated piping having a temperature lower than that of the inner wall face member is heated. The non-heated piping is arranged at such a position as the heat of internal heating gas does not exert an effect on the temperature of the inner wall face member heated by a substrate heating mechanism.