Title:
プロセスチャンバの内部を近大気圧に保つ装置及び方法
Document Type and Number:
Japanese Patent JP2008544565
Kind Code:
A
Abstract:
A process chamber (1) is provided for a thermal treatment of a semiconductor wafer. The process chamber (1) comprises a gas injection line (4), for injecting a process gas into the process chamber (1), and a gas exhaustion line (14). A pump (8) is coupled to the gas exhaustion line (14) and maintains a pressure inside the process chamber (1) at a level that is higher than the ambient atmospheric pressure outside the process chamber (1).
Inventors:
Antonius M S-P El Vendé Kerkov
Application Number:
JP2008519045A
Publication Date:
December 04, 2008
Filing Date:
June 23, 2006
Export Citation:
Assignee:
NXP B.V.
International Classes:
H01L21/26
Attorney, Agent or Firm:
Kenji Sugimura
Kosaku Sugimura
Kiyoshi Kuruma
Shiro Fujitani
Tatsuya Sawada
Kosaku Sugimura
Kiyoshi Kuruma
Shiro Fujitani
Tatsuya Sawada