ETCHANT FOR CONTROLLING SURFACE ROUGHNESS OF SILICON WAFER

Title:

ETCHANT FOR CONTROLLING SURFACE ROUGHNESS OF SILICON WAFER

Document Type and Number:

Japanese Patent JP3522475

Kind Code:

B2

Abstract:

PROBLEM TO BE SOLVED: To suppress the deterioration of TTV(total thickness variation) by etching to 5% or less in etching depth and to lower the glossiness of a wafer.
SOLUTION: When the etching speed is 7 to less than 40μm/min, the degree of viscosity is 1.4 to 18.5mPa sec. When the speed is 40 to 100μm, the degree of the speed is 1.4 to 4.5mPa sec, and the surface tension is set to at least 60dyne/cm. That is, etchant for controlling the surface roughness of the silicon wafer like acid etchant of HF-HNO3 is provided.

Inventors:

Takahashi, Isao
Tominaga, Masaaki
Takaishi, Kazunari
Shingyouchi, Takayuki

Application Number:

JP747697A

Publication Date:

April 26, 2004

Filing Date:

January 20, 1997

Export Citation:

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Assignee:

MITSUBISHI MATERIALS SHILICON CORP
MITSUBISHI MATERIALS CORP

International Classes:

C09K13/00; H01L21/304; H01L21/306; H01L21/308; (IPC1-7): H01L21/306

Attorney, Agent or Firm:

須田正義

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