Title:
ETCHANT
Document Type and Number:
Japanese Patent JPH07183287
Kind Code:
A
Abstract:
PURPOSE: To supply an etchant in which presence or absence of a crystal defect of a wafer of Ga1-XAlXAs or GaAs can be evaluated without influence of Al mixed crystal rate.
CONSTITUTION: An etchant for etching a wafer of Ga1-XAlXAs or GaAs contains mixed solution of hydrogen peroxide acid, sulfuric acid, hydrogen fluoride, nitric acid and pure water. For example, the concentrations of the peroxide acid, the sulfuric acid, the fluoride, the nitric acid are respectively about 30%, about 96%, about 49% and about 99%, and the volumetric ratio of the peroxide acid, the sulfuric acid, the fluoride, the nitric acid and the pure water is respectively about 4 : about 1 : about 8 and about 4.
Inventors:
OGAWA KOJI
Application Number:
JP34729693A
Publication Date:
July 21, 1995
Filing Date:
December 24, 1993
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
C09K13/08; H01L21/308; H01L21/66; (IPC1-7): H01L21/308; C09K13/08; H01L21/66
Attorney, Agent or Firm:
Kazuo Sato (3 others)
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