ETCHING LIQUID, METHOD OF ETCHING, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Title:

ETCHING LIQUID, METHOD OF ETCHING, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JP2004172576

Kind Code:

A

Abstract:

To provide a method of microfabricating trench wiring of 0.1μm generation or beyond, with which the load on a polishing process is reduced by forming trench wiring of copper by an etching method using an etching liquid which prevents galvanic corrosion of a barrier layer baser than copper and which does not corrode copper.

The method of fabricating semiconductor devices is furnished with a process of removing copper by an etching method using an etching liquid, which is an aqueous solution of hydrofluoric acid containing an anticorrosive (BTA-based anticorrosive) for copper. The method comprises a step of polishing excessive copper and a barrier layer formed on an insulating film after copper is deposited via the barrier layer composed of a metal or a metal compound that is baser than copper so as to fill a wiring trench formed in an insulating film, and a step of removing a faulty insulation layer mainly composed of the barrier layer remaining on the insulating film with a surface layer of the insulating film by etching the surface layer of the insulating film using the etching liquid.

Inventors:

OTORII SUGURU
TAI KAORI
HORIKOSHI HIROSHI
KOMAI HISANORI
SATO SHUZO

Application Number:

JP2003297277A

Publication Date:

June 17, 2004

Filing Date:

August 21, 2003

Export Citation:

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Assignee:

SONY CORP

International Classes:

H01L21/3205; C09K13/06; C09K13/08; C23F1/26; H01L21/306; H01L21/3105; H01L21/321; H01L21/768; (IPC1-7): H01L21/306; H01L21/3205

Attorney, Agent or Firm:

Funabashi Kuninori

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