Title:
ETCHING METHOD OF COMPOUND SEMICONDUCTOR, MANUFACTURE OF COMPOUND SEMICONDUCTOR, AND SEMICONDUCTOR LASER
Document Type and Number:
Japanese Patent JP3850944
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide an etching method by which two or more compound semiconductor layers composed of different materials can be etched at a time.
SOLUTION: A stripe-like ridge waveguide 9 having a flat section 5a of 0.4 μm in thickness and a stripe section 5b of 3 μm in width in a p-type A GaInP clad layer 5 is formed by etching (at an etching rate of about 140 &angst /sec) a compound semiconductor layer composed of a p-type GaAs protective layer 7, a p-type GaInP layer 6, and the clad layer 5 at a time through a mask layer 8 by using an etchant prepared by mixing 75 vol.% hydraulic acid (containing 47% HBr), 50 vol.% phosphoric acid (containing 85-87% H3PO4), and 1 vol.% hydrogen peroxide (containing 35% H2O) with each other and maintained at 10°C.
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Inventors:
Kiyoshi Ota
Soken Goto
Soken Goto
Application Number:
JP6826297A
Publication Date:
November 29, 2006
Filing Date:
March 21, 1997
Export Citation:
Assignee:
Sanyo Electric Co., Ltd.
International Classes:
H01S5/00; H01S5/22; H01S3/00; H01S5/065; (IPC1-7): H01S3/18
Domestic Patent References:
| JP62216389A | ||||
| JP758405A | ||||
| JP62165384A | ||||
| JP8340147A | ||||
| JP7335550A | ||||
| JP7154028A |
Attorney, Agent or Firm:
Hiroshi Kakutani
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