Title:
Etching method of group III nitride semiconductor and manufacturing method of group III nitride semiconductor device
Document Type and Number:
Japanese Patent JP6328898
Kind Code:
B2
Inventors:
Masaru Hori
Makoto Sekine
Osamu Oda
Kenji Ishikawa
Makoto Sekine
Osamu Oda
Kenji Ishikawa
Application Number:
JP2013196296A
Publication Date:
May 23, 2018
Filing Date:
September 22, 2013
Export Citation:
Assignee:
Nagoya University
International Classes:
H01L21/3065
Domestic Patent References:
| JP2001148543A | ||||
| JP2000277493A | ||||
| JP4258118A | ||||
| JP2013062342A | ||||
| JP2005150136A |
Attorney, Agent or Firm:
Osamu Fujitani
Akinori Isshiki
Akinori Isshiki
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