Title:
ETCHING METHOD IN TUNGSTEN CVD REACTION CHAMBER
Document Type and Number:
Japanese Patent JPH09228053
Kind Code:
A
Abstract:
To improve safeness without using a harmful material such as NF3 in a tungsten (W) CVD reaction device and to make a removing device for a harmful material unnecessary.
In the etching method in a WCVD reaction room, the tungsten depositing in the reaction room 1 or on a stage due to the film forming gas during WCVD reaction is removed with plasma. After the film forming gas is discharged from the reaction room 1, the chamber is evacuated to a specified vacuum degree, into which a mixture gas of sulfur hexafluoride (SF6) and oxygen (O2) is introduced while high-frequency power is supplied to carry out the plasma etching process.
Inventors:
AKIYAMA TAKAO
Application Number:
JP3387896A
Publication Date:
September 02, 1997
Filing Date:
February 21, 1996
Export Citation:
Assignee:
NEC CORP
International Classes:
C23C16/44; C23C16/455; H01L21/28; H01L21/285; H01L21/302; H01L21/3065; (IPC1-7): C23C16/44; H01L21/285; H01L21/3065
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)