Title:
ETCHING METHOD OF INP SEMICONDUCTOR CRYSTAL
Document Type and Number:
Japanese Patent JPS5848424
Kind Code:
A
Abstract:
PURPOSE:To form the reverse mesa shape on a substrate with good control by a method wherein an InP semiconductor crystal substrate is etched by using etchant added a predetermined amount of H2O to a Br2-CH3OH mixed solution. CONSTITUTION:A solution added a predetermined amount of H2O to a Br2- CH3OH mixed solution is used as etchant and etching is done by providing a mask in <110> direction on the (100) face of an InP semiconductor crystalline substrate. Where, Br2 is fixed at 0.2%, and (b), (c), and (d) contain H2O of 10%, 15% and 50% respectively. As can see from the above, whether the shape of the etching is a reactive retedetermining type or not is decided by the amount of H2O mixed with CH3OH. Therefore, the InP semiconductor crystal substrate 3 can be etched in reserve mesa shape by suitably deciding the mixed amount of H2O.
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Inventors:
FURUYAMA HIDETO
UEMATSU YUTAKA
UEMATSU YUTAKA
Application Number:
JP14559881A
Publication Date:
March 22, 1983
Filing Date:
September 17, 1981
Export Citation:
Assignee:
KOGYO GIJUTSUIN
International Classes:
H01L21/308; H01L21/306; (IPC1-7): H01L21/306