Title:
ETCHING METHOD FOR INSULATING LAYER
Document Type and Number:
Japanese Patent JPS5986225
Kind Code:
A
Abstract:
PURPOSE:To facilitate the laminated layer of thin films by laminating and forming insulating layers of two different types in etching properties, anisotropically etching it and isotropically etching it, thereby improving the etching accuracy and inclining the etching section. CONSTITUTION:An insulating layer 34 such as an SiO2 film is formed on a substrate, on which the first conductive layer 33 is formed. The layer 34 forms a lower insulating layer, and an insulating layer which has good stepwise coating characteristic and dense film quality is selected for the conductive layer. In order to flatten the surface, an SiO2 film 35 formed by a spin coating on the layer 34 is formed as an upper insulating layer. The layer 35 is selected to have more feasible properties to etch as compared with the layer 34, the surface is flattened, the surface of the layer 35 is patterned by using an AZ system resist 35 prior to the formation of the second conductive layer 38 on the layer 35, an anisotropic etching is performed by using a parallel flat plate type dry etching unit, and the layers 34, 35 are further isotropically etched by using a cylindrical plasma etching unit.
Inventors:
OOTSUKA KOUJI
KIRA TOORU
NAMIKATA RIYOUJI
YOSHIKAWA MITSUHIKO
KIRA TOORU
NAMIKATA RIYOUJI
YOSHIKAWA MITSUHIKO
Application Number:
JP19728782A
Publication Date:
May 18, 1984
Filing Date:
November 09, 1982
Export Citation:
Assignee:
SHARP KK
International Classes:
H01L21/302; H01L21/3065; (IPC1-7): H01L21/302
Attorney, Agent or Firm:
Sugiyama Takeshi