Title:
ETCHING METHOD AND PLASMA PROCESSING APPARATUS
Document Type and Number:
Japanese Patent JP2023080566
Kind Code:
A
Abstract:
To provide a technique for protecting a surface in a chamber from reactive species.SOLUTION: A disclosed etching method includes a step (a) of forming a protective film containing carbon on a surface in a chamber of a plasma processing apparatus. The etching method further includes a step (b) of etching an etch film of a substrate with plasma generated from an etching gas that includes a hydrogen fluoride gas and a hydrofluorocarbon gas within the chamber. The substrate includes the etch film, which is a silicon-containing film, and a mask containing carbon and provided on the etch film.SELECTED DRAWING: Figure 1
Inventors:
KAKO TAKASHI
NAGAI RYU
TANAKA KOKI
NAGAI RYU
TANAKA KOKI
Application Number:
JP2021193985A
Publication Date:
June 09, 2023
Filing Date:
November 30, 2021
Export Citation:
Assignee:
TOKYO ELECTRON LTD
International Classes:
H01L21/3065
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshiki Kuroki
Junji Kashiwaoka
Yoshiki Kuroki
Junji Kashiwaoka