Title:
ETCHING METHOD AND PLASMA PROCESSING DEVICE
Document Type and Number:
Japanese Patent JP2022032235
Kind Code:
A
Abstract:
To provide a technique for suppressing closing of an opening of a mask, decrease in thickness of the mask and lateral enlargement of an opening formed in an organic film in plasma etching.SOLUTION: An etching method includes the step of supplying a process gas into a chamber in which a substrate is accommodated. The substrate comprises a silicon oxide film, an organic film provided on the silicon oxide film, and a mask provided on the organic film. The etching method further includes the step of etching the organic film by generating plasma from the process gas. The etching method further includes the step of changing a pressure in the chamber step by step from a first pressure to a second pressure until exposing the silicon oxide film in the opening formed in the organic film through the etching.SELECTED DRAWING: Figure 1
Inventors:
SHOJI REI
MIYASHITA HIROMI
ITO HIROHARU
TANAKA KATSUNORI
MIYASHITA HIROMI
ITO HIROHARU
TANAKA KATSUNORI
Application Number:
JP2020135821A
Publication Date:
February 25, 2022
Filing Date:
August 11, 2020
Export Citation:
Assignee:
TOKYO ELECTRON LTD
International Classes:
H01L21/3065
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshiki Kuroki
Junji Kashiwaoka
Yoshiki Kuroki
Junji Kashiwaoka
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